EPC2010
detaildesc

EPC2010

EPC

Producto No:

EPC2010

Fabricante:

EPC

Paquete:

Die

Lote:

-

Ficha de datos:

pdf

Descripción:

GANFET N-CH 200V 12A DIE

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -40°C ~ 125°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 5 V
Mounting Type Surface Mount
Product Status Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs 25mOhm @ 6A, 5V
Supplier Device Package Die
Vgs(th) (Max) @ Id 2.5V @ 3mA
Drain to Source Voltage (Vdss) 200 V
Series eGaN®
Power Dissipation (Max) -
Package / Case Die
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Mfr EPC
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Tape & Reel (TR)
Base Product Number EPC20