TSM60NC196CI C0G

Taiwan Semiconductor Corporation

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TSM60NC196CI C0G

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Package:

ITO-220

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Description:

600V, 20A, SINGLE N-CHANNEL POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1535 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	196mOhm @ 9.5A, 10V
Supplier Device Package	ITO-220
Vgs(th) (Max) @ Id	5V @ 1mA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	70W (Tc)
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM60