TSM60NB099PW C1G

Taiwan Semiconductor Corporation

Product No:

TSM60NB099PW C1G

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Package:

TO-247

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Description:

MOSFET N-CHANNEL 600V 38A TO247

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2587 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	99mOhm @ 11.7A, 10V
Supplier Device Package	TO-247
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	329W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM60