TSM600N25ECH C5G

Taiwan Semiconductor Corporation

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TSM600N25ECH C5G

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Package:

TO-251 (IPAK)

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Description:

MOSFET N-CHANNEL 250V 8A TO251

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	423 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.4 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	600mOhm @ 4A, 10V
Supplier Device Package	TO-251 (IPAK)
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	250 V
Series	-
Power Dissipation (Max)	52W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM600