TSM4ND65CI

Taiwan Semiconductor Corporation

Product No:

TSM4ND65CI

Manufacturer:

Package:

ITO-220

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 4A ITO220

Quantity:

Delivery:

Payment:

In Stock : 1847

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	596 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.8 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.6Ohm @ 1.2A, 10V
Supplier Device Package	ITO-220
Vgs(th) (Max) @ Id	3.8V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	41.6W (Tc)
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM4