TSM4ND60CI C0G
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TSM4ND60CI C0G

Taiwan Semiconductor Corporation

Product No:

TSM4ND60CI C0G

Package:

ITO-220

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 600V 4A ITO220

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 582 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V
Mounting Type Through Hole
Product Status Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs 2.2Ohm @ 1.4A, 10V
Supplier Device Package ITO-220
Vgs(th) (Max) @ Id 3.8V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series -
Power Dissipation (Max) 41.6W (Tc)
Package / Case TO-220-3 Full Pack, Isolated Tab
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM4ND60