TSM4N90CZ C0G

Taiwan Semiconductor Corporation

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TSM4N90CZ C0G

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Package:

TO-220

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Description:

MOSFET N-CHANNEL 900V 4A TO220

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	955 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	4Ohm @ 2A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	900 V
Series	-
Power Dissipation (Max)	38.7W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM4N90