TSM10ND65CI
Taiwan Semiconductor Corporation
Product No:
TSM10ND65CI
Manufacturer:
Package:
ITO-220
Batch:
-
Datasheet:
Description:
650V, 10A, SINGLE N-CHANNEL POW
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1863 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39.6 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3A, 10V |
| Supplier Device Package | ITO-220 |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Drain to Source Voltage (Vdss) | 650 V |
| Series | - |
| Power Dissipation (Max) | 56.8W (Tc) |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Mfr | Taiwan Semiconductor Corporation |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | TSM10 |
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