TPN11006NL,LQ
detaildesc

TPN11006NL,LQ

Toshiba Semiconductor and Storage

Product No:

TPN11006NL,LQ

Package:

8-TSON Advance (3.1x3.1)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 17A 8TSON

Quantity:

Delivery:

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Payment:

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In Stock : 4583

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.855

    $0.855

  • 10

    $0.74195

    $7.4195

  • 100

    $0.513855

    $51.3855

  • 500

    $0.429324

    $214.662

  • 1000

    $0.36538

    $365.38

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 11.4mOhm @ 8.5A, 10V
Supplier Device Package 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id 2.5V @ 200µA
Drain to Source Voltage (Vdss) 60 V
Series U-MOSVIII-H
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TPN11006