TK9J90E,S1E

Toshiba Semiconductor and Storage

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TK9J90E,S1E

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TO-3P(N)

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Description:

MOSFET N-CH 900V 9A TO3P

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	1.3Ohm @ 4.5A, 10V
Supplier Device Package	TO-3P(N)
Vgs(th) (Max) @ Id	4V @ 900µA
Drain to Source Voltage (Vdss)	900 V
Series	-
Power Dissipation (Max)	250W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK9J90