TK8R2E06PL,S1X
Toshiba Semiconductor and Storage
Product No:
TK8R2E06PL,S1X
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
PB-F POWER MOSFET TRANSISTOR TO-
Quantity:
Delivery:
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Product Information
Parameter Info
User Guide
| Operating Temperature | 175°C |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 25A, 10V |
| Supplier Device Package | TO-220 |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA |
| Drain to Source Voltage (Vdss) | 60 V |
| Series | U-MOSIX-H |
| Power Dissipation (Max) | 81W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Mfr | Toshiba Semiconductor and Storage |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
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