TK5Q60W,S1VQ
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TK5Q60W,S1VQ

Toshiba Semiconductor and Storage

Product No:

TK5Q60W,S1VQ

Package:

I-Pak

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 600V 5.4A IPAK

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 900mOhm @ 2.7A, 10V
Supplier Device Package I-Pak
Vgs(th) (Max) @ Id 3.7V @ 270µA
Drain to Source Voltage (Vdss) 600 V
Series DTMOSIV
Power Dissipation (Max) 60W (Tc)
Package / Case TO-251-3 Stub Leads, IPak
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK5Q60