TK5A90E,S4X

Toshiba Semiconductor and Storage

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TK5A90E,S4X

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TO-220SIS

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Description:

PB-F POWER MOSFET TRANSISTOR TO-

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	3.1Ohm @ 2.3A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4V @ 450µA
Drain to Source Voltage (Vdss)	900 V
Series	-
Power Dissipation (Max)	40W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube