TK210V65Z,LQ

Toshiba Semiconductor and Storage

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TK210V65Z,LQ

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Package:

4-DFN-EP (8x8)

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Description:

MOSFET N-CH 650V 15A 5DFN

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	210mOhm @ 7.5A, 10V
Supplier Device Package	4-DFN-EP (8x8)
Vgs(th) (Max) @ Id	4V @ 610µA
Drain to Source Voltage (Vdss)	650 V
Series	DTMOSVI
Power Dissipation (Max)	130W (Tc)
Package / Case	4-VSFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK210V65