TK090Z65Z,S1F

Toshiba Semiconductor and Storage

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TK090Z65Z,S1F

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Package:

TO-247-4L(T)

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Description:

MOSFET N-CH 650V 30A TO247-4L

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	90mOhm @ 15A, 10V
Supplier Device Package	TO-247-4L(T)
Vgs(th) (Max) @ Id	4V @ 1.27mA
Drain to Source Voltage (Vdss)	650 V
Series	DTMOSVI
Power Dissipation (Max)	230W (Tc)
Package / Case	TO-247-4
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube