TK055U60Z1,RQ

Toshiba Semiconductor and Storage

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TK055U60Z1,RQ

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TOLL

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600V DTMOS VI TOLL 55MOHM

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3680 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	55mOhm @ 15A, 10V
Supplier Device Package	TOLL
Vgs(th) (Max) @ Id	4V @ 1.69mA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	270W (Tc)
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)