SUD08P06-155L-GE3

Vishay Siliconix

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SUD08P06-155L-GE3

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Package:

TO-252

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Description:

MOSFET P-CH 60V 8.4A TO252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	155mOhm @ 5A, 10V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	TrenchFET®
Power Dissipation (Max)	1.7W (Ta), 20.8W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.4A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SUD08