STQ2HNK60ZR-AP

STMicroelectronics

Product No:

STQ2HNK60ZR-AP

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Package:

TO-92-3

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Description:

MOSFET N-CH 600V 500MA TO92-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	4.8Ohm @ 1A, 10V
Supplier Device Package	TO-92-3
Vgs(th) (Max) @ Id	4.5V @ 50µA
Drain to Source Voltage (Vdss)	600 V
Series	SuperMESH™
Power Dissipation (Max)	3W (Tc)
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	500mA (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Cut Tape (CT)
Base Product Number	STQ2HNK60