STP18N60DM2

STMicroelectronics

Product No:

STP18N60DM2

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Package:

TO-220

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Description:

MOSFET N-CH 600V 12A TO220

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	295mOhm @ 6A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	MDmesh™ DM2
Power Dissipation (Max)	90W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STP18