STI10NM60N

STMicroelectronics

Product No:

STI10NM60N

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Package:

I2PAK (TO-262)

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Description:

MOSFET N-CH 600V 10A I2PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	550mOhm @ 4A, 10V
Supplier Device Package	I2PAK (TO-262)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	MDmesh™ II
Power Dissipation (Max)	70W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STI10N