STD1NK60-1

STMicroelectronics

Product No:

STD1NK60-1

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Package:

I-PAK

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Description:

MOSFET N-CH 600V 1A IPAK

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In Stock : 5830

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	156 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	8.5Ohm @ 500mA, 10V
Supplier Device Package	I-PAK
Vgs(th) (Max) @ Id	3.7V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	SuperMESH™
Power Dissipation (Max)	30W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STD1