SSM6N16FUTE85LF
Toshiba Semiconductor and Storage
Product No:
SSM6N16FUTE85LF
Manufacturer:
Package:
US6
Batch:
-
Datasheet:
-
Description:
MOSFET 2N-CH 20V 0.1A US6
Quantity:
Delivery:
Payment:
In Stock : 3600
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.456
$0.456
10
$0.3382
$3.382
100
$0.191235
$19.1235
500
$0.126654
$63.327
1000
$0.0971
$97.1
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Product Information
Parameter Info
User Guide
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
| Supplier Device Package | US6 |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Drain to Source Voltage (Vdss) | 20V |
| Series | - |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 200mW |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tape & Reel (TR) |
| Base Product Number | SSM6N16 |
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15,000 ㎡In-stock Warehouse
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