SSM3J35AMFV,L3F

Toshiba Semiconductor and Storage

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SSM3J35AMFV,L3F

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VESM

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MOSFET P-CH 20V 250MA VESM

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	42 pF @ 10 V
FET Type	P-Channel
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.4Ohm @ 150mA, 4.5V
Supplier Device Package	VESM
Vgs(th) (Max) @ Id	1V @ 100µA
Drain to Source Voltage (Vdss)	20 V
Series	U-MOSVII
Power Dissipation (Max)	150mW (Ta)
Package / Case	SOT-723
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SSM3J35