SQUN702E-T1_GE3
detaildesc

SQUN702E-T1_GE3

Vishay Siliconix

Product No:

SQUN702E-T1_GE3

Manufacturer:

Vishay Siliconix

Package:

Die

Batch:

-

Datasheet:

pdf

Description:

MOSFET N&P-CH COMMON DRAIN

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Configuration N and P-Channel, Common Drain
Input Capacitance (Ciss) (Max) @ Vds 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
Mounting Type Surface Mount, Wettable Flank
Product Status Active
Rds On (Max) @ Id, Vgs 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Supplier Device Package Die
Vgs(th) (Max) @ Id 2.5V @ 250µA, 3.5V @ 250µA
Drain to Source Voltage (Vdss) 40V, 200V
Series Automotive, AEC-Q101, TrenchFET®
Package / Case Die
Technology MOSFET (Metal Oxide)
Power - Max 48W (Tc), 60W (Tc)
Current - Continuous Drain (Id) @ 25°C 30A (Tc), 20A (Tc)
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Base Product Number SQUN702