SQM120N04-1M7L_GE3

Vishay Siliconix

Product No:

SQM120N04-1M7L_GE3

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Package:

TO-263

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Description:

MOSFET N-CH 40V 120A TO263

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	14606 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	285 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.7mOhm @ 30A, 10V
Supplier Device Package	TO-263
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	TrenchFET®
Power Dissipation (Max)	375W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQM120