SQJ409EP-T1_BE3

Vishay Siliconix

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SQJ409EP-T1_BE3

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Package:

PowerPAK® SO-8

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Description:

P-CHANNEL 40-V (D-S) 175C MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max)	68W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)