SQ4425EY-T1_GE3
detaildesc

SQ4425EY-T1_GE3

Vishay Siliconix

Product No:

SQ4425EY-T1_GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

-

Datasheet:

pdf

Description:

MOSFET P-CHANNEL 30V 18A 8SOIC

Quantity:

Delivery:

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Payment:

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In Stock : 35721

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.767

    $1.767

  • 10

    $1.46585

    $14.6585

  • 100

    $1.16698

    $116.698

  • 500

    $0.98743

    $493.715

  • 1000

    $0.837814

    $837.814

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3630 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 12mOhm @ 13A, 10V
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max) 6.8W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQ4425