SISS63DN-T1-GE3

Vishay Siliconix

Product No:

SISS63DN-T1-GE3

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PowerPAK® 1212-8S

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Description:

MOSFET P-CH 20V 35.1/127.5A PPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7080 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	236 nC @ 8 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2.7mOhm @ 15A, 10V
Supplier Device Package	PowerPAK® 1212-8S
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	TrenchFET® Gen III
Power Dissipation (Max)	5W (Ta), 65.8W (Tc)
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35.1A (Ta), 127.5A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISS63