SISS60DN-T1-GE3

Vishay Siliconix

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SISS60DN-T1-GE3

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PowerPAK® 1212-8S

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Description:

MOSFET N-CH 30V 50.1/181.8A PPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds	3960 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85.5 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.31mOhm @ 20A, 10V
Supplier Device Package	PowerPAK® 1212-8S
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	5.1W (Ta), 65.8W (Tc)
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50.1A (Ta), 181.8A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+16V, -12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISS60