SISS32LDN-T1-GE3

Vishay Siliconix

Product No:

SISS32LDN-T1-GE3

Manufacturer:

Package:

PowerPAK® 1212-8SH

Batch:

Datasheet:

Description:

MOSFET N-CH 80V 17.4A/63A PPAK

Quantity:

Delivery:

Payment:

In Stock : 8980

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2550 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7.2mOhm @ 15A, 10V
Supplier Device Package	PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Package / Case	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17.4A (Ta), 63A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISS32