SISS12DN-T1-GE3
Vishay Siliconix
Product No:
SISS12DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Batch:
-
Datasheet:
Description:
MOSFET N-CH 40V 37.5A/60A PPAK
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 20 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.98mOhm @ 10A, 10V |
| Supplier Device Package | PowerPAK® 1212-8S |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Drain to Source Voltage (Vdss) | 40 V |
| Series | TrenchFET® Gen IV |
| Power Dissipation (Max) | 5W (Ta), 65.7W (Tc) |
| Package / Case | PowerPAK® 1212-8S |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 37.5A (Ta), 60A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | +20V, -16V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SISS12 |
SISS12DN-T1-GE3 Related Blog
Purchase must see! Electronic component selection from entry to give up
2024-10-24 37
Basic knowledge of crystal vibration, circuit design, non-vibration reasons, circuit principle, crystal frequency, digital circuit application (crystal vibration data download)
2024-04-08 96
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 43
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 30
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号