SISH617DN-T1-GE3
detaildesc

SISH617DN-T1-GE3

Vishay Siliconix

Product No:

SISH617DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Batch:

-

Datasheet:

pdf

Description:

MOSFET P-CH 30V 13.9A/35A PPAK

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 11679

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.874

    $0.874

  • 10

    $0.7581

    $7.581

  • 100

    $0.52459

    $52.459

  • 500

    $0.43833

    $219.165

  • 1000

    $0.373056

    $373.056

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 12.3mOhm @ 13.9A, 10V
Supplier Device Package PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series TrenchFET®
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13.9A (Ta), 35A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISH617