SISH536DN-T1-GE3

Vishay Siliconix

Product No:

SISH536DN-T1-GE3

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Package:

PowerPAK® 1212-8SH

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Description:

N-CHANNEL 30 V (D-S) MOSFET POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.25mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchFET® Gen V
Power Dissipation (Max)	3.57W (Ta), 26.5W (Tc)
Package / Case	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	24.7A (Ta), 67.4A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+16V, -12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)