SISH112DN-T1-GE3

Vishay Siliconix

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SISH112DN-T1-GE3

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Package:

PowerPAK® 1212-8SH

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Description:

MOSFET N-CH 30V 11.3A PPAK

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Operating Temperature	-50°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2610 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7.5mOhm @ 17.8A, 10V
Supplier Device Package	PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchFET®
Power Dissipation (Max)	1.5W (Tc)
Package / Case	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.3A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISH112