SIRC16DP-T1-RE3

Vishay Siliconix

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SIRC16DP-T1-RE3

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Package:

PowerPAK® SO-8

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Description:

N-CHANNEL 25-V (D-S) MOSFET W/SC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds	5150 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	0.96mOhm @ 15A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	2.4V @ 250µA
Drain to Source Voltage (Vdss)	25 V
Series	-
Power Dissipation (Max)	5W (Ta), 54.3W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	57A (Ta), 60A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)