SIR626DP-T1-RE3

Vishay Siliconix

Product No:

SIR626DP-T1-RE3

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Package:

PowerPAK® SO-8

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Description:

MOSFET N-CH 60V 100A PPAK SO-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5130 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 7.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.7mOhm @ 20A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	3.4V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	104W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIR626