SIR5607DP-T1-RE3

Vishay Siliconix

Product No:

SIR5607DP-T1-RE3

Manufacturer:

Package:

PowerPAK® SO-8

Batch:

Datasheet:

Description:

P-CHANNEL 60 V (D-S) MOSFET POWE

Quantity:

Delivery:

Payment:

In Stock : 45

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5020 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	112 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7mOhm @ 20A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	2.6V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	TrenchFET®
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	22.2A (Ta), 90.9A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)