SIR4409DP-T1-RE3
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SIR4409DP-T1-RE3

Vishay Siliconix

Product No:

SIR4409DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

pdf

Description:

P-CHANNEL 40 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5670 pF @ 20 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 2.3V @ 250µA
Drain to Source Voltage (Vdss) 40 V
Series -
Power Dissipation (Max) 4.8W (Ta), 59.5W (Tc)
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.2A (Ta), 60.6A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)