SIR1309DP-T1-GE3

Vishay Siliconix

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SIR1309DP-T1-GE3

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PowerPAK® SO-8

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Description:

P-CHANNEL 30 V (D-S) MOSFET POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3250 pF @ 15 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7.3mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	4.8W (Ta), 56.8W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19.1A (Ta), 65.7A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)