SIHD180N60E-GE3
detaildesc

SIHD180N60E-GE3

Vishay Siliconix

Product No:

SIHD180N60E-GE3

Manufacturer:

Vishay Siliconix

Package:

D-Pak

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 600V 19A TO252AA

Quantity:

Delivery:

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Payment:

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In Stock : 2980

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.622

    $2.622

  • 10

    $2.20115

    $22.0115

  • 100

    $1.78068

    $178.068

  • 500

    $1.582795

    $791.3975

  • 1000

    $1.35526

    $1355.26

  • 2000

    $1.276126

    $2552.252

  • 5000

    $1.224312

    $6121.56

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 195mOhm @ 9.5A, 10V
Supplier Device Package D-Pak
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series E
Power Dissipation (Max) 156W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHD180