SIHB24N65EFT1-GE3

Vishay Siliconix

Product No:

SIHB24N65EFT1-GE3

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Package:

TO-263 (D²Pak)

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Description:

N-CHANNEL 650V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2774 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	156mOhm @ 12A, 10V
Supplier Device Package	TO-263 (D²Pak)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	E
Power Dissipation (Max)	250W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)