SIE812DF-T1-GE3

Vishay Siliconix

Product No:

SIE812DF-T1-GE3

Manufacturer:

Package:

10-PolarPAK® (L)

Batch:

Datasheet:

Description:

MOSFET N-CH 40V 60A 10POLARPAK

Quantity:

Delivery:

Payment:

In Stock : 275

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	8300 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2.6mOhm @ 25A, 10V
Supplier Device Package	10-PolarPAK® (L)
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	TrenchFET®
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Package / Case	10-PolarPAK® (L)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIE812