SIDR220DP-T1-GE3
detaildesc

SIDR220DP-T1-GE3

Vishay Siliconix

Product No:

SIDR220DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 25V 87.7A/100A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 2975

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.5555

    $2.5555

  • 10

    $2.1261

    $21.261

  • 100

    $1.69233

    $169.233

  • 500

    $1.431973

    $715.9865

  • 1000

    $1.215012

    $1215.012

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1085 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 5.8mOhm @ 20A, 10V
Supplier Device Package PowerPAK® SO-8DC
Vgs(th) (Max) @ Id 2.1V @ 250µA
Drain to Source Voltage (Vdss) 25 V
Series TrenchFET® Gen IV
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 87.7A (Ta), 100A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +16V, -12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIDR220