SIA4263DJ-T1-GE3
detaildesc

SIA4263DJ-T1-GE3

Vishay Siliconix

Product No:

SIA4263DJ-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SC-70-6

Batch:

-

Datasheet:

pdf

Description:

P-CHANNEL 20-V (D-S) MOSFET POWE

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 6010

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.551

    $0.551

  • 10

    $0.46835

    $4.6835

  • 100

    $0.325565

    $32.5565

  • 500

    $0.254182

    $127.091

  • 1000

    $0.206606

    $206.606

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1825 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 52.2 nC @ 8 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 22mOhm @ 7.5A, 4.5V
Supplier Device Package PowerPAK® SC-70-6
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series TrenchFET® Gen III
Power Dissipation (Max) 3.29W (Ta), 15.6W (Tc)
Package / Case PowerPAK® SC-70-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta), 12A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)