SI8823EDB-T2-E1

Vishay Siliconix

Product No:

SI8823EDB-T2-E1

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Package:

4-MICRO FOOT® (0.8x0.8)

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Description:

MOSFET P-CH 20V 2.7A 4MICRO FOOT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	95mOhm @ 1A, 4.5V
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Vgs(th) (Max) @ Id	800mV @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	TrenchFET® Gen III
Power Dissipation (Max)	900mW (Tc)
Package / Case	4-XFBGA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.7A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8823