SI8819EDB-T2-E1
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SI8819EDB-T2-E1

Vishay Siliconix

Product No:

SI8819EDB-T2-E1

Manufacturer:

Vishay Siliconix

Package:

4-MICRO FOOT® (0.8x0.8)

Batch:

-

Datasheet:

pdf

Description:

MOSFET P-CH 12V 2.9A 4MICRO FOOT

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 6 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 8 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 80mOhm @ 1.5A, 3.7V
Supplier Device Package 4-MICRO FOOT® (0.8x0.8)
Vgs(th) (Max) @ Id 900mV @ 250µA
Drain to Source Voltage (Vdss) 12 V
Series -
Power Dissipation (Max) 900mW (Ta)
Package / Case 4-XFBGA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 3.7V
Package Tape & Reel (TR)
Base Product Number SI8819