SI8816EDB-T2-E1
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SI8816EDB-T2-E1

Vishay Siliconix

Product No:

SI8816EDB-T2-E1

Manufacturer:

Vishay Siliconix

Package:

4-Microfoot

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 30V 4MICROFOOT

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 109mOhm @ 1A, 10V
Supplier Device Package 4-Microfoot
Vgs(th) (Max) @ Id 1.4V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series TrenchFET®
Power Dissipation (Max) 500mW (Ta)
Package / Case 4-XFBGA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI8816