SI8808DB-T2-E1

Vishay Siliconix

Product No:

SI8808DB-T2-E1

Manufacturer:

Package:

4-Microfoot

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 4MICROFOOT

Quantity:

Delivery:

Payment:

In Stock : 6122

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 8 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	95mOhm @ 1A, 4.5V
Supplier Device Package	4-Microfoot
Vgs(th) (Max) @ Id	900mV @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchFET®
Power Dissipation (Max)	500mW (Ta)
Package / Case	4-UFBGA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8808