SI8800EDB-T2-E1
detaildesc

SI8800EDB-T2-E1

Vishay Siliconix

Product No:

SI8800EDB-T2-E1

Manufacturer:

Vishay Siliconix

Package:

4-Microfoot

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 20V 4MICROFOOT

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 5

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4275

    $0.4275

  • 10

    $0.3648

    $3.648

  • 100

    $0.272175

    $27.2175

  • 500

    $0.213826

    $106.913

  • 1000

    $0.165234

    $165.234

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 8 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 4.5V
Supplier Device Package 4-Microfoot
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series TrenchFET®
Power Dissipation (Max) 500mW (Ta)
Package / Case 4-XFBGA, CSPBGA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI8800