SI8429DB-T1-E1

Vishay Siliconix

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SI8429DB-T1-E1

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Package:

4-Microfoot

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Description:

MOSFET P-CH 8V 11.7A 4MICROFOOT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1640 pF @ 4 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	35mOhm @ 1A, 4.5V
Supplier Device Package	4-Microfoot
Vgs(th) (Max) @ Id	800mV @ 250µA
Drain to Source Voltage (Vdss)	8 V
Series	TrenchFET®
Power Dissipation (Max)	2.77W (Ta), 6.25W (Tc)
Package / Case	4-XFBGA, CSPBGA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.7A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±5V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8429